1mb10-120,1MB10D-120, molded igbt 1200v / 10a molded package features small molded package low power loss soft switching with low switching surge and noise high reliability, high ruggedness (rbsoa, scsoa etc.) comprehensive line-up applications inverter for motor drive ac and dc servo drive amplifier uninterruptible power supply maximum ratings and characteristics absolute maximum ratings (at tc=25c unless otherwise specified) item symbol collector-emitter voltage v ces gate-emitter voltaga v ges collector dc tc=25c i c25 current t c=100c i c100 1ms tc=25c icp max. power dissipation(igbt) p c operating temperature t j storage temperature t stg screw torque - rating 1200 20 16 10 48 135 +150 -40 to +150 50 unit v v a a a w c c ncm equivalent circuit schematic item symbol collector-emitter voltage v ces gate-emitter voltaga v ges collector dc tc=25c i c25 current t c=100c i c100 1ms tc=25c icp max. power dissipation (igbt) p c max. power dissipation (fwd) p c operating temperature t j storage temperature t stg screw torque - rating 1200 20 16 10 48 135 85 +150 -40 to +150 50 unit v v a a a w w c c ncm 1mb10-120 / igbt 1MB10D-120 / igbt+fwd c:collector e:emitter g:gate igbt c:collector e:emitter g:gate igbt + fwd
item zero gate voltage collector current gate-emitter leakage current gate-emitter threshold voltage collector-emitter saturation voltage input capacitance output capacitance reverse transfer capacitance turn-on time turn-off time i ces i ges v ge(th) v ce(sat) c ies c oes c res t on t r t off t f ? ? 1.0 ??20 5.5 ? 8.5 ? ? 3.5 ? 1200 ? ? 250 ? ?80? ? ? 1.2 ? ? 0.6 ? ? 1.5 ? ? 0.5 v ge =0v, v ce =1200v v ce =0v, v ge =20v v ce =20v, i c =10ma v ge =15v, i c =10a v ge =0v v ce =10v f=1mhz v cc =600v i c =10a v ge =15v r g =160 ohm (half bridge) ma a v v pf s electrical characteristics (at tj=25c unless otherwise specified) thermal resistance characteristics thermal resistance ? ? 0.92 ? ? 1.47 igbt fwd c/w c/w item symbol characteristics conditions unit min. typ. max. rth(j-c) rth(j-c) symbol characteristics conditions unit min. typ. max. item zero gate voltage collector current gate-emitter leakage current gate-emitter threshold voltage collector-emitter saturation voltage input capacitance output capacitance reverse transfer capacitance turn-on time turn-off time fwd forward on voltage reverse recovery time i ces i ges v ge(th) v ce(sat) c ies c oes c res t on t r t off t f v f t rr ? ? 1.0 ??20 5.5 ? 8.5 ? ? 3.5 ? 1200 ? ? 250 ? ?80? ? ? 1.2 ? ? 0.6 ? ? 1.5 ? ? 0.5 ? ? 3.0 ? ? 0.35 v ge =0v, v ce =1200v v ce =0v, v ge =20v v ce =20v, i c =10ma v ge =15v, i c =10a v ge =0v v ce =10v f=1mhz v cc =600v, i c =10a v ge =15v r g =160 ohm (half bridge) i f =10a, v ge =0v i f =10a, v ge =-10v, di/dt=100a/s ma a v v pf s v s symbol characteristics conditions unit min. typ. max. 1mb10-120, 1MB10D-120 molded igbt 1mb10-120 / igbt 1MB10D-120 / igbt+fwd thermal resistance ? ? 0.92 igbt c/w item symbol characteristics conditions unit min. typ. max. rth(j-c) 1mb10-120 / igbt 1MB10D-120 / igbt+fwd outline drawings, mm 1mb10-120, 1MB10D-120 to-3p
characteristics 1mb10-120,1MB10D-120 1mb10-120, 1MB10D-120 molded igbt collector current vs. collector-emitter voltage tj=25c collector current vs. collector-emitter voltage tj=125c collector-emitter vs. gate-emitter voltage tj=25c collector-emitter vs. gate-emitter voltage tj=125c switching time vs. collector current vcc=600v, r g =160 ohm, v ge =15v, tj=25c switching time vs. collector current vcc=600v, r g =160 ohm, v ge =15v, tj=125c collector-emitter voltage : v ce [v] collector-emitter voltage : v ce [v] collector current : ic [a] collector current : ic [a] 0 1 2 3 4 5 collector-emitter voltage : v ce [v] collector-emitter voltage : v ce [v] 0 5 10 15 20 gate-emitter voltage : v ge [v] gate-emitter voltage : v ge [v] switching time : ton, tr, toff, tf [n sec.] 100 collector current : ic [a] collector current : ic [a] switching time : ton, tr, toff, tf [n sec.] 0 5 10 15 20 20 15 10 5 0 10 8 6 4 2 0 1000 10 8 6 4 2 0 100 1000 0 1 2 3 4 5 0 5 10 15 20 20 15 10 5 0 0 5 10 15 20
collector-emitter voltage : v ce [v] 10 capacitance : cies, coes, cres [nf] capacitance vs. collector-emitter voltage tj=25c 0 5 10 15 20 25 30 35 100 igbt module switching time vs. r g vcc=600v, ic=10a, v ge =15v, tj=25c dynamic input characteristics tj=25c gate resistance : r g [ohm] gate charge : qg [nc] 100 1000 switching time : ton, tr, toff, tf [n sec.] collector-emitter voltage : v ce [v] gate-emitter voltage : v ge [v] 20 15 10 5 0 0 200 400 600 800 1000 1200 collector-emitter voltage : v ce [v] collector current : ic [a] 0 20 40 60 80 100 120 140 160 25 20 15 10 5 0 1000 800 600 400 200 0 switching time vs. r g vcc=600v, ic=10a, v ge =15v, tj=125c gate resistance : r g [ohm] 100 1000 100 switching time : ton, tr, toff, tf [n sec.] reversed biased safe operating area +v ge =15v, -v ge = 15v, tj = 125c, r g = 160 ohm < <> typical short circuit capability vcc=800v, r g =160 ohm, tj=125c short circuit time : tsc [s] 1000 400 300 200 100 0 5 10 15 20 25 80 60 40 20 0 short circuit time current : isc [a] characteristics 1mb10-120,1MB10D-120 1mb10-120, 1MB10D-120 gate voltage : v ge [v] 100 1
igbt module 10 -4 10 -3 10 -2 10 -1 10 0 pulse width : p w [sec.] thermal resistance : r th (j-c) [c/w] transient thermal resistance characteristics 1mb10-120,1MB10D-120 1MB10D-120 reverse recovery time vs. forward current -di/dt=30a / sec reverse recovery current vs. forward current -di/dt=30a / sec reverse recovery time : trr [nsec] reverse recovery current : irr [a] 800 600 400 200 0 10 8 6 4 2 0 0 5 10 15 forward current : i f [a] forward current : i f [a] 0 1.0 2.0 3.0 4.0 0 20 40 60 80 100 120 forward voltage : v f [v] forward current : i f [a] reverse recovery time : trr [nsec] -di/dt [ a / sec ] forward current vs. foeward voltage reverse recovery time characteristics vs. -di/dt if=10a , tj=125c 20 15 10 5 0 reverse recovery current : irr [a] 10 0 10 -1 10 -2 10 1 20 15 10 5 0 800 600 400 200 0 1mb10-120, 1MB10D-120 0 5 10 15
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